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| QS043-402-203812/5 94.0 80 0.25 2 12.0 11.0 12.0 11.0 12.0 (C2E1) 1 (E2) 2 (C1) 3 7(G2) 6(E2) 1 48.0 16.0 14.0 2 3 2-O6.5 7 6 12 1 11 94 80 0 .2 5 12 11 2 12 3 7 6 2-O 5.5 4 4-fasten tab #110 t= 0.5 8 6 4 18.0 4 5(E1) 4(G1) 3-M5 23.0 23.0 17.0 5 4 5 4 3-M5 23 23 17 14 9 14 9 14 4-fasten tab #110 t=0.5 21.2 7.5 16 7 16 7 16 LABEL 30 +1.0 - 0 .5 30 +1.0 - 0 .5 LABEL PDMB00BS12 ollector-mitter oltage ate-mitter oltage ollector urrent ollector ower issipation unction emperature ange torage emperature ange (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal 7 PDMB00BS12C Dimension:mm 23 4 12 17 35 . . (kgfcm) , PDMB00BS12 . . PDMB00BS12C ise urn-on all urn-off ime ime ime ime = 1200V,= 0V = 20V,= 0V = 100A,= 15V = 5V,= 100mA = 10V,= 0V,= 1MH = 600V L= 6.0 G= 15.0 = 15V . . . . 6,300 . . . . . . . . . . . . ollector-mitter ut-ff urrent ate-mitter eakage urrent ollector-mitter aturation oltage ate-mitter hreshold oltage nput apacitance witching ime orward urrent eak orward oltage everse ecovery ime . . . . . . = 100A,= 0V = 100A,= -10V i/t= 200A/s hermal mpedance iode th(j-c) Junction to Case Tc . . . . . QS043-402-203813/5 Fig.1- Output Characteristics (Typical) 200 Fig.2- Output Characteristics (Typical) TC=25C 200 TC=125C VGE=20V 12V 11V VGE=20V 180 160 12V 11V 180 15V 160 15V Collector Current I C (A) 140 120 100 80 60 40 20 0 0 1 2 3 4 Collector Current I C (A) 10V 140 120 100 80 60 40 10V 9V 9V 8V 7V 8V 7V 5 20 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25C 16 14 12 10 8 6 4 2 0 TC=125C IC=50A 100A 200A IC=50A 200A Collector to Emitter Voltage V CE (V) 100A 12 10 8 6 4 2 0 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) 14 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 14 100000 30000 RL=6.0 TC=25C Collector to Emitter Voltage V CE (V) VGE=0V f=1MHZ TC=25C Cies Gate to Emitter Voltage VGE (V) 600 500 400 300 200 100 0 0 12 10 10000 Capacitance C (pF) 3000 1000 300 100 30 10 VCE=600V 400V 200V 8 6 4 2 0 700 Coes Cres 100 200 300 400 500 600 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Total Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) QS043-402-203814/5 Fig.7- Collector Current vs. Switching Time (Typical) 2 10 Fig.8- Series Gate Impedance vs. Switching Time (Typical) VCC=600V IC=100A VGE=15V TC=25C Resistive Load 1.6 VCC=600V RG=15 VGE=15V TC=25C Resistive Load Switching Time t (s) tOFF 1.2 Switching Time t (s) 3 1 toff tf ton 0.8 tf 0.4 tON tr(VCE) 0 20 40 60 80 100 0.3 tr(VCE) 0.1 10 30 100 200 0 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.9- Collector Current vs. Switching Time 10 Fig.10- Series Gate Impedance vs. Switching Time 10 5 3 tOFF Switching Time t (s) 1 VCC=600V RG=15 VGE=15V TC=125C Inductive Load 2 VCC=600V IC=100A VGE=15V TC=125C Inductive Load tf 0.3 0.1 Switching Time t (s) tON 1 0.5 toff ton 0.2 0.1 0.05 0.03 0.01 tr(Ic) tf tr(IC ) 10 30 100 0.003 0 20 40 60 80 100 120 140 0.02 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.11- Collector Current vs. Switching Loss 40 100 Fig.12- Series Gate Impedance vs. Switching Loss VCC=600V IC=100A VGE=15V TC=125C Inductive Load Switching Loss ESW (mJ/Pulse) 30 Switching Loss ESW (mJ/Pulse) VCC=600V RG=15 VGE=15V TC=125C Inductive Load EON EOFF 30 EON 20 10 EOFF 10 ERR 3 ERR 0 0 25 50 75 100 125 150 1 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) QS043-402-203815/5 300 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) Fig.14- Reverse Recovery Characteristics (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 250 trr 300 IF=100A TC=25C TC=125C TC=25C TC=125C Forward Current I F (A) 200 100 150 30 IRrM 100 10 50 0 0 1 2 3 4 3 0 200 400 600 800 1000 1200 Forward Voltage VF (V) -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area (Typical) 1000 500 200 RG=15 , VGE=15V, TC=125C Collector Current I C (A) 100 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 1000 1200 1400 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 1 (/W) 5x10 -1 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10 -4 10 -5 FRD IGBT Transient Thermal Impedance Rth (J-C) TC=25 1 Shot Pulse 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) |
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